DMT6015LFV Series

N-Channel Enhancement Mode MOSFET

Catalog

N-Channel Enhancement Mode MOSFET

Part	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Technology	Mounting Type	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max)	Vgs (Max)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	FET Type	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)
Diodes Inc DMT6015LFV-7	9.5 A 35 A	18.9 nC	MOSFET (Metal Oxide)	Surface Mount	60 V	16 mOhm	2.2 W 30 W	16 V	8-PowerVDFN	1103 pF	2.5 V	N-Channel	PowerDI3333-8 (Type UX)	-55 °C	150 °C	4.5 V 10 V

Catalog

N-Channel Enhancement Mode MOSFET

Key Features

• Low RDS(ON)– Ensures On-State Losses are Minimized

• Small Form Factor Thermally Efficient Package Enables Higher Density End Products

• Occupies just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.