AUIRF7303Q

Obsolete

Infineon Technologies

MOSFET 2N-CH 30V 5.3A 8SOIC

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Obsolete

Infineon Technologies

MOSFET 2N-CH 30V 5.3A 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	AUIRF7303Q

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	5.3 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	21 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	2.4 W
Rds On (Max) @ Id, Vgs	50 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

Part	Configuration	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Power - Max [Max]	Package / Case	Package / Case [y]	Package / Case [x]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Grade	Qualification	FET Feature
Infineon Technologies AUIRF7103Q	2 N-Channel (Dual)	3 V	15 nC	-55 °C	175 ░C	50 V	130 mOhm	8-SO	2.4 W	8-SOIC	3.9 mm	0.154 in	3 A	Surface Mount	255 pF	MOSFET (Metal Oxide)
Infineon Technologies AUIRF7103QTR	2 N-Channel (Dual)	3 V	15 nC	-55 °C	175 ░C	50 V	130 mOhm	8-SOIC	2.4 W	8-SOIC	3.9 mm	0.154 in	3 A	Surface Mount	255 pF	MOSFET (Metal Oxide)	Automotive	AEC-Q101
Infineon Technologies AUIRF7303Q	2 N-Channel (Dual)	3 V	21 nC	-55 °C	175 ░C	30 V	50 mOhm	8-SOIC	2.4 W	8-SOIC	3.9 mm	0.154 in	5.3 A	Surface Mount		MOSFET (Metal Oxide)			Logic Level Gate

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 30V 5.3A 2.4W Surface Mount 8-SOIC

Technical documentation and resources