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MOSFET 2N-CH 50V 3A 8SO
| Part | Configuration | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Supplier Device Package | Power - Max [Max] | Package / Case | Package / Case [y] | Package / Case [x] | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds [Max] | Technology | Grade | Qualification | FET Feature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 2 N-Channel (Dual) | 3 V | 15 nC | -55 °C | 175 ░C | 50 V | 130 mOhm | 8-SO | 2.4 W | 8-SOIC | 3.9 mm | 0.154 in | 3 A | Surface Mount | 255 pF | MOSFET (Metal Oxide) | |||
Infineon Technologies | 2 N-Channel (Dual) | 3 V | 15 nC | -55 °C | 175 ░C | 50 V | 130 mOhm | 8-SOIC | 2.4 W | 8-SOIC | 3.9 mm | 0.154 in | 3 A | Surface Mount | 255 pF | MOSFET (Metal Oxide) | Automotive | AEC-Q101 | |
Infineon Technologies | 2 N-Channel (Dual) | 3 V | 21 nC | -55 °C | 175 ░C | 30 V | 50 mOhm | 8-SOIC | 2.4 W | 8-SOIC | 3.9 mm | 0.154 in | 5.3 A | Surface Mount | MOSFET (Metal Oxide) | Logic Level Gate |