IXFQ12N80P

Obsolete

IXYS

MOSFET N-CH 800V 12A TO3P

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Obsolete

IXYS

MOSFET N-CH 800V 12A TO3P

Technical Specifications

Parameters and characteristics for this part

Specification	IXFQ12N80P

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	51 nC
Input Capacitance (Ciss) (Max) @ Vds	2800 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max)	360 W
Rds On (Max) @ Id, Vgs	850 mOhm
Supplier Device Package	TO-3P
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5.5 V

Part	Vgs (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	FET Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Technology
IXYS IXFQ12N80P	30 V	800 V	10 V	850 mOhm	360 W	-55 °C	150 °C	Through Hole	12 A	5.5 V	51 nC	SC-65-3 TO-3P-3	N-Channel	TO-3P	2800 pF	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 800 V 12A (Tc) 360W (Tc) Through Hole TO-3P

Technical documentation and resources