MOSFET N-CH 800V 12A TO3P
| Part | Vgs (Max) | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case | FET Type | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | 30 V | 800 V | 10 V | 850 mOhm | 360 W | -55 °C | 150 °C | Through Hole | 12 A | 5.5 V | 51 nC | SC-65-3 TO-3P-3 | N-Channel | TO-3P | 2800 pF | MOSFET (Metal Oxide) |