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STB14NM50N - D²PAK

STB14NM50N

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STMicroelectronics

N-CHANNEL 500 V, 0.28 OHM TYP., 12 A MDMESH II POWER MOSFET IN A D2PAK PACKAGE

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STB14NM50N - D²PAK

STB14NM50N

Active
STMicroelectronics

N-CHANNEL 500 V, 0.28 OHM TYP., 12 A MDMESH II POWER MOSFET IN A D2PAK PACKAGE

Deep-Dive with AI

DocumentsDatasheetDatasheet+18

Technical Specifications

Parameters and characteristics for this part

SpecificationSTB14NM50N
Current - Continuous Drain (Id) @ 25°C12 A
Drain to Source Voltage (Vdss)500 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]27 nC
Input Capacitance (Ciss) (Max) @ Vds816 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)90 W
Rds On (Max) @ Id, Vgs320 mOhm
Supplier Device PackageD2PAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.89
10$ 3.26
100$ 2.64
500$ 2.35
Digi-Reel® 1$ 3.89
10$ 3.26
100$ 2.64
500$ 2.35
Tape & Reel (TR) 1000$ 2.01
2000$ 1.89
5000$ 1.81

Description

General part information

STB14NM50N Series

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.