STB14NM50N
ActiveN-CHANNEL 500 V, 0.28 OHM TYP., 12 A MDMESH II POWER MOSFET IN A D2PAK PACKAGE
STB14NM50N
ActiveN-CHANNEL 500 V, 0.28 OHM TYP., 12 A MDMESH II POWER MOSFET IN A D2PAK PACKAGE
Description
General part information
STB14 Series
These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | STB14NM50N |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 12 A |
| Drain to Source Voltage (Vdss) | 500 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 27 nC |
| Input Capacitance (Ciss) (Max) | 816 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Package Name | D2PAK |
| Power Dissipation (Max) | 90 W |
| Rds On (Max) | 320 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) | 4 V |
Pricing
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CAD
3D models and CAD resources for this part
