STB14NM50N Series

N-channel 500 V, 0.28 Ohm typ., 12 A MDmesh II Power MOSFET in a D2PAK package

Catalog

N-channel 500 V, 0.28 Ohm typ., 12 A MDmesh II Power MOSFET in a D2PAK package

Part	FET Type	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Supplier Device Package	Operating Temperature	Technology
STMicroelectronics STB14NM50N	N-Channel	320 mOhm	90 W	27 nC	500 V	10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	12 A	4 V	816 pF	25 V	D2PAK	150 °C	MOSFET (Metal Oxide)

Catalog

N-channel 500 V, 0.28 Ohm typ., 12 A MDmesh II Power MOSFET in a D2PAK package

Description

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.