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DMP3013SFK-13 - U-FDFN 2523-6

DMP3013SFK-13

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Diodes Inc

P-CHANNEL ENHANCEMENT MODE MOSFET

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DMP3013SFK-13 - U-FDFN 2523-6

DMP3013SFK-13

Active
Diodes Inc

P-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMP3013SFK-13
Current - Continuous Drain (Id) @ 25°C10.5 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs33.7 nC
Input Capacitance (Ciss) (Max) @ Vds1674 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case6-PowerUDFN
Power Dissipation (Max)19.5 W, 1 W
Rds On (Max) @ Id, Vgs [Max]14 mOhm
Supplier Device PackageU-DFN2523-6
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 10000$ 0.21
20000$ 0.21

Description

General part information

DMP3013SFV Series

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.