DMP3013SFV Series

30V P-Channel Enhancement Mode MOSFET

Catalog

30V P-Channel Enhancement Mode MOSFET

Part	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Technology	Vgs (Max)	Supplier Device Package	Package / Case	Drain to Source Voltage (Vdss)	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max)	FET Type	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs
Diodes Inc DMP3013SFK-13	-55 °C	150 °C	1674 pF	MOSFET (Metal Oxide)	25 V	U-DFN2523-6	6-PowerUDFN	30 V	Surface Mount	14 mOhm	1 W 19.5 W	P-Channel	33.7 nC	4.5 V 10 V	10.5 A	3 V
Diodes Inc DMP3013SFV-13	-55 °C	150 °C	1674 pF	MOSFET (Metal Oxide)	25 V	PowerDI3333-8 (Type UX)	8-PowerVDFN	30 V	Surface Mount			P-Channel	33.7 nC	4.5 V 10 V	12 A 35 A	3 V	940 mW	9.5 mOhm
Diodes Inc DMP3013SFV-7	-55 °C	150 °C	1674 pF	MOSFET (Metal Oxide)	25 V	PowerDI3333-8 (Type UX)	8-PowerVDFN	30 V	Surface Mount			P-Channel	33.7 nC	4.5 V 10 V	12 A 35 A	3 V	940 mW	9.5 mOhm

Catalog

30V P-Channel Enhancement Mode MOSFET

Key Features

• Low RDS(ON) – ensures on-state losses are minimized

• Small form factor thermally efficient package enables higher density end products

• Occupies just 33% of the board area occupied by SO-8 enabling smaller end product

• ESD Protected Gate

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.