IRS2111PBF

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Infineon Technologies

IC GATE DRVR HALF-BRIDGE 8DIP

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Infineon Technologies

IC GATE DRVR HALF-BRIDGE 8DIP

Technical Specifications

Parameters and characteristics for this part

Specification	IRS2111PBF

Channel Type	Synchronous
Current - Peak Output (Source, Sink) [custom]	290 mA
Current - Peak Output (Source, Sink) [custom]	600 mA
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Non-Inverting, Inverting
Logic Voltage - VIL, VIH	12.6 V, 8.3 V
Mounting Type	Through Hole
Number of Drivers	2
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	0.3 in
Package / Case	8-DIP
Package / Case	7.62 mm
Rise / Fall Time (Typ) [custom]	35 ns
Rise / Fall Time (Typ) [custom]	75 ns
Supplier Device Package	8-PDIP
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	10 VDC

Part	Logic Voltage - VIL, VIH	Operating Temperature [Max]	Operating Temperature [Min]	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Supplier Device Package	Input Type	Voltage - Supply [Max]	Voltage - Supply [Min]	Driven Configuration	High Side Voltage - Max (Bootstrap) [Max]	Number of Drivers	Mounting Type	Package / Case	Package / Case	Package / Case	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Gate Type	Channel Type	Package / Case [y]	Package / Case [x]
Infineon Technologies IRS2111PBF	8.3 V 12.6 V	150 °C	-40 °C	35 ns	75 ns	8-PDIP	Inverting Non-Inverting	20 V	10 VDC	Half-Bridge	600 V	2	Through Hole	0.3 in	8-DIP	7.62 mm	290 mA	600 mA	IGBT N-Channel MOSFET	Synchronous
Infineon Technologies IRS2111SPBF	8.3 V 12.6 V	150 °C	-40 °C	35 ns	75 ns	8-SOIC	Inverting Non-Inverting	20 V	10 VDC	Half-Bridge	600 V	2	Surface Mount		8-SOIC		290 mA	600 mA	IGBT N-Channel MOSFET	Synchronous	3.9 mm	0.154 in
Infineon Technologies IRS2111PBF	8.3 V 12.6 V	150 °C	-40 °C	35 ns	75 ns	8-PDIP	Inverting Non-Inverting	20 V	10 VDC	Half-Bridge	600 V	2	Through Hole	0.3 in	8-DIP	7.62 mm	290 mA	600 mA	IGBT N-Channel MOSFET	Synchronous
Infineon Technologies IRS2111STRPBF	8.3 V 12.6 V	150 °C	-40 °C	35 ns	75 ns	8-SOIC	Inverting Non-Inverting	20 V	10 VDC	Half-Bridge	600 V	2	Surface Mount		8-SOIC		290 mA	600 mA	IGBT N-Channel MOSFET	Synchronous	3.9 mm	0.154 in

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General part information

Half-Bridge Gate Driver IC Inverting, Non-Inverting 8-PDIP

Technical documentation and resources

No documents available