IC GATE DRVR HALF-BRIDGE 8DIP
| Part | Logic Voltage - VIL, VIH | Operating Temperature [Max] | Operating Temperature [Min] | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Supplier Device Package | Input Type | Voltage - Supply [Max] | Voltage - Supply [Min] | Driven Configuration | High Side Voltage - Max (Bootstrap) [Max] | Number of Drivers | Mounting Type | Package / Case | Package / Case | Package / Case | Current - Peak Output (Source, Sink) [custom] | Current - Peak Output (Source, Sink) [custom] | Gate Type | Channel Type | Package / Case [y] | Package / Case [x] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 8.3 V 12.6 V | 150 °C | -40 °C | 35 ns | 75 ns | 8-PDIP | Inverting Non-Inverting | 20 V | 10 VDC | Half-Bridge | 600 V | 2 | Through Hole | 0.3 in | 8-DIP | 7.62 mm | 290 mA | 600 mA | IGBT N-Channel MOSFET | Synchronous | ||
Infineon Technologies | 8.3 V 12.6 V | 150 °C | -40 °C | 35 ns | 75 ns | 8-SOIC | Inverting Non-Inverting | 20 V | 10 VDC | Half-Bridge | 600 V | 2 | Surface Mount | 8-SOIC | 290 mA | 600 mA | IGBT N-Channel MOSFET | Synchronous | 3.9 mm | 0.154 in | ||
Infineon Technologies | 8.3 V 12.6 V | 150 °C | -40 °C | 35 ns | 75 ns | 8-PDIP | Inverting Non-Inverting | 20 V | 10 VDC | Half-Bridge | 600 V | 2 | Through Hole | 0.3 in | 8-DIP | 7.62 mm | 290 mA | 600 mA | IGBT N-Channel MOSFET | Synchronous | ||
Infineon Technologies | 8.3 V 12.6 V | 150 °C | -40 °C | 35 ns | 75 ns | 8-SOIC | Inverting Non-Inverting | 20 V | 10 VDC | Half-Bridge | 600 V | 2 | Surface Mount | 8-SOIC | 290 mA | 600 mA | IGBT N-Channel MOSFET | Synchronous | 3.9 mm | 0.154 in |