DMWSH120H28SM4
ActiveDiodes Inc
1200V N-CHANNEL SILICON CARBIDE POWER MOSFET
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DocumentsRecommended Soldering Techniques
DMWSH120H28SM4
ActiveDiodes Inc
1200V N-CHANNEL SILICON CARBIDE POWER MOSFET
Deep-Dive with AI
DocumentsRecommended Soldering Techniques
Technical Specifications
Parameters and characteristics for this part
| Specification | DMWSH120H28SM4 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 100 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 15 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 173.7 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 3944 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-4 |
| Power Dissipation (Max) [Max] | 429 W |
| Rds On (Max) @ Id, Vgs | 28.5 mOhm |
| Supplier Device Package | TO-247-4 |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Vgs (Max) [Max] | 19 V |
| Vgs (Max) [Min] | -8 V |
| Vgs(th) (Max) @ Id | 3.6 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 30 | $ 23.93 | |
Description
General part information
DMWSH120H28SM4 Series
This SiC MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
Documents
Technical documentation and resources