DMWSH120H28SM4 Series

1200V N-Channel Silicon Carbide Power MOSFET

Catalog

1200V N-Channel Silicon Carbide Power MOSFET

Part	Vgs (Max) [Min]	Vgs (Max) [Max]	Package / Case	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	FET Type
Diodes Inc DMWSH120H28SM4	-8 V	19 V	TO-247-4	3.6 V	3944 pF	429 W	-55 °C	175 ░C	SiC (Silicon Carbide Junction Transistor)	100 A	Through Hole	28.5 mOhm	173.7 nC	TO-247-4	15 V	1200 V	N-Channel

Catalog

1200V N-Channel Silicon Carbide Power MOSFET

Key Features

• Low On-Resistance

• High BVDSS Rating for Power Application

• Low Input Capacitance

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• An automotive-compliant part is available under separate datasheet (DMWSH120H28SM4Q)

Description

This SiC MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.