IRF5210STRLPBF

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Infineon Technologies

POWER MOSFET, HEXFET, P CHANNEL, 100 V, 38 A, 0.06 OHM, TO-263 (D2PAK), SURFACE MOUNT

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IRF5210STRLPBF

Active

Infineon Technologies

POWER MOSFET, HEXFET, P CHANNEL, 100 V, 38 A, 0.06 OHM, TO-263 (D2PAK), SURFACE MOUNT

Deep-Dive with AI

DocumentsProduct Change Notice EN IR Part Numbering System

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IRF5210STRLPBF

Current - Continuous Drain (Id) @ 25°C	38 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	230 nC
Input Capacitance (Ciss) (Max) @ Vds	2780 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	170 W, 3.1 W
Rds On (Max) @ Id, Vgs	60 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IRF5210 Series

Part	Vgs (Max)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	FET Type	Vgs(th) (Max) @ Id	Mounting Type	Technology	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Package / Case
Infineon Technologies IRF5210STRLPBF	20 V	3.1 W 170 W	2780 pF	230 nC	-55 °C	150 °C	100 V	38 A	60 mOhm	P-Channel	4 V	Surface Mount	MOSFET (Metal Oxide)	10 V	D2PAK	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 4.05
		10	$ 2.66
		100	$ 1.87
	Digi-Reel®	1	$ 4.05
		10	$ 2.66
		100	$ 1.87
	Tape & Reel (TR)	800	$ 1.46
		1600	$ 1.37

Description

General part information

IRF5210 Series

The IRF5210STRLPBF is a HEXFET® single P-channel Power MOSFET offers of this design is a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications.