Beta
⌘K
POWER MOSFET, HEXFET, P CHANNEL, 100 V, 38 A, 0.06 OHM, TO-263 (D2PAK), SURFACE MOUNT
| Part | Vgs (Max) | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | FET Type | Vgs(th) (Max) @ Id | Mounting Type | Technology | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 20 V | 3.1 W 170 W | 2780 pF | 230 nC | -55 °C | 150 °C | 100 V | 38 A | 60 mOhm | P-Channel | 4 V | Surface Mount | MOSFET (Metal Oxide) | 10 V | D2PAK | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB |