DMTH8003SPS-13

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Diodes Inc

ENHANCEMENT MODE MOSFET N-CHANNEL 80V 100A 3.9MOHM 8-PIN POWERDI T/R

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DMTH8003SPS-13

Active

Diodes Inc

ENHANCEMENT MODE MOSFET N-CHANNEL 80V 100A 3.9MOHM 8-PIN POWERDI T/R

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DocumentsDatasheet Recommended Soldering Techniques +1

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Technical Specifications

Parameters and characteristics for this part

Specification	DMTH8003SPS-13

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	124.3 nC
Input Capacitance (Ciss) (Max) @ Vds	8952 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max) [Max]	2.9 W
Rds On (Max) @ Id, Vgs	3.9 mOhm
Supplier Device Package	PowerDI5060-8 (Type K)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

DMTH8003SPS Series

80V +175°C N-Channel Enhancement Mode MOSFET

Part	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Technology	Package / Case	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	FET Type	Supplier Device Package
Diodes Inc DMTH8003SPS-13	Surface Mount	100 A	124.3 nC	3.9 mOhm	MOSFET (Metal Oxide)	8-PowerTDFN	2.9 W	6 V 10 V	-55 °C	175 ░C	20 V	8952 pF	4 V	80 V	N-Channel	PowerDI5060-8 (Type K)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.77
		10	$ 1.47
		100	$ 1.17
		500	$ 0.99
		1000	$ 0.84
	Digi-Reel®	1	$ 1.77
		10	$ 1.47
		100	$ 1.17
		500	$ 0.99
		1000	$ 0.84
	Tape & Reel (TR)	2500	$ 0.77

Description

General part information

DMTH8003SPS Series

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.