DMTH8003SPS Series

80V +175°C N-Channel Enhancement Mode MOSFET

Catalog

80V +175°C N-Channel Enhancement Mode MOSFET

Part	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Technology	Package / Case	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	FET Type	Supplier Device Package
Diodes Inc DMTH8003SPS-13	Surface Mount	100 A	124.3 nC	3.9 mOhm	MOSFET (Metal Oxide)	8-PowerTDFN	2.9 W	6 V 10 V	-55 °C	175 ░C	20 V	8952 pF	4 V	80 V	N-Channel	PowerDI5060-8 (Type K)

Catalog

80V +175°C N-Channel Enhancement Mode MOSFET

Key Features

• Rated to +175°C – Ideal for High Ambient Temperature Environments

• 100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application

• Thermally Efficient Package – Cooler Running Applications High Conversion Efficiency

• Low RDS(ON) – Minimizes On-State Losses

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.