SUD90330E-GE3

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Vishay General Semiconductor - Diodes Division

MOSFET N-CH 200V 35.8A TO252AA

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Vishay General Semiconductor - Diodes Division

MOSFET N-CH 200V 35.8A TO252AA

Technical Specifications

Parameters and characteristics for this part

Specification	SUD90330E-GE3

Current - Continuous Drain (Id) @ 25°C	35.8 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	7.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	32 nC
Input Capacitance (Ciss) (Max) @ Vds	1172 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs	37.5 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Supplier Device Package	Vgs (Max)	Package / Case	FET Type	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Technology
Vishay General Semiconductor - Diodes Division SUD90330E-GE3	-55 °C	175 ░C	37.5 mOhm	32 nC	35.8 A	Surface Mount	10 V	7.5 V	TO-252AA	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	125 W	1172 pF	200 V	4 V	MOSFET (Metal Oxide)

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General part information

N-Channel 200 V 35.8A (Tc) 125W (Tc) Surface Mount TO-252AA

Technical documentation and resources