MOSFET N-CH 200V 35.8A TO252AA
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Supplier Device Package | Vgs (Max) | Package / Case | FET Type | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Technology | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division  | -55 °C  | 175 ░C  | 37.5 mOhm  | 32 nC  | 35.8 A  | Surface Mount  | 10 V  | 7.5 V  | TO-252AA  | 20 V  | DPAK (2 Leads + Tab)  SC-63  TO-252-3  | N-Channel  | 125 W  | 1172 pF  | 200 V  | 4 V  | MOSFET (Metal Oxide)  |