IPW60R280C6FKSA1

Obsolete

Infineon Technologies

MOSFET N-CH 600V 13.8A TO247-3

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Obsolete

Infineon Technologies

MOSFET N-CH 600V 13.8A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPW60R280C6FKSA1

Current - Continuous Drain (Id) @ 25°C	13.8 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	43 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	950 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	104 W
Rds On (Max) @ Id, Vgs	280 mOhm
Supplier Device Package	PG-TO247-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	FET Type	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]
Infineon Technologies IPW60R250CP	TO-247-3	35 nC	250 mOhm	-55 °C	150 °C	MOSFET (Metal Oxide)	PG-TO247-3-1	12 A	N-Channel	Through Hole	10 V	3.5 V	650 V	1200 pF	104 W	20 V
Infineon Technologies IPW60R299CPFKSA1	TO-247-3		299 mOhm	-55 °C	150 °C	MOSFET (Metal Oxide)	PG-TO247-3-1	11 A	N-Channel	Through Hole	10 V	3.5 V	600 V		96 W	20 V	29 nC
Infineon Technologies IPW60R280C6FKSA1	TO-247-3		280 mOhm	-55 °C	150 °C	MOSFET (Metal Oxide)	PG-TO247-3-1	13.8 A	N-Channel	Through Hole	10 V	3.5 V	600 V		104 W	20 V	43 nC	950 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 13.8A (Tc) 104W (Tc) Through Hole PG-TO247-3-1

Technical documentation and resources

No documents available