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IPW60R250CP - PG-TO247-3

IPW60R250CP

Obsolete
Infineon Technologies

MOSFET N-CH 650V 12A TO247-3

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IPW60R250CP - PG-TO247-3

IPW60R250CP

Obsolete
Infineon Technologies

MOSFET N-CH 650V 12A TO247-3

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIPW60R250CP
Current - Continuous Drain (Id) @ 25°C12 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]35 nC
Input Capacitance (Ciss) (Max) @ Vds1200 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max)104 W
Rds On (Max) @ Id, Vgs250 mOhm
Supplier Device PackagePG-TO247-3-1
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

IPW60R Series

N-Channel 650 V 12A (Tc) 104W (Tc) Through Hole PG-TO247-3-1

Documents

Technical documentation and resources

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