IRS2118STRPBF

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Infineon Technologies

EICEDRIVER™ 600 V HIGH-SIDE DRIVER IC WITH TYPICAL 0.29 A SOURCE AND 0.6 A SINK OUTPUT CURRENTS. IT COMES WITH A FUNCTIONAL LEVELSHIFT SOIC 8N PACKAGE AND WORKS WITH IGBTS AND MOSFETS. FEATURES: SINGLE INPUT

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IRS2118STRPBF

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Infineon Technologies

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IRS2118STRPBF

Channel Type	Single
Current - Peak Output (Source, Sink) [custom]	290 mA
Current - Peak Output (Source, Sink) [custom]	600 mA
Driven Configuration	High-Side
Gate Type	N-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Inverting
Logic Voltage - VIL, VIH [Max]	9.5 V
Logic Voltage - VIL, VIH [Min]	6 V
Mounting Type	Surface Mount
Number of Drivers	1
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Rise / Fall Time (Typ) [custom]	35 ns
Rise / Fall Time (Typ) [custom]	75 ns
Supplier Device Package	8-SOIC
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	10 VDC

IRS2118 Series

Part	Channel Type	Supplier Device Package	Input Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Gate Type	Mounting Type	High Side Voltage - Max (Bootstrap) [Max]	Logic Voltage - VIL, VIH [Max]	Logic Voltage - VIL, VIH [Min]	Voltage - Supply [Max]	Voltage - Supply [Min]	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Driven Configuration	Number of Drivers	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Package / Case [y]	Package / Case [x]	Package / Case	Package / Case
Infineon Technologies IRS2118SPBF	Single	8-SOIC	Inverting	35 ns	75 ns	IGBT N-Channel MOSFET	Surface Mount	600 V	9.5 V	6 V	20 V	10 VDC	290 mA	600 mA	High-Side	1	150 °C	-40 °C	8-SOIC	3.9 mm	0.154 in
Infineon Technologies IRS2118PBF	Single	8-PDIP	Inverting	35 ns	75 ns	IGBT N-Channel MOSFET	Through Hole	600 V	9.5 V	6 V	20 V	10 VDC	290 mA	600 mA	High-Side	1	150 °C	-40 °C	8-DIP			0.3 in	7.62 mm
Infineon Technologies IRS2118STRPBF	Single	8-SOIC	Inverting	35 ns	75 ns	IGBT N-Channel MOSFET	Surface Mount	600 V	9.5 V	6 V	20 V	10 VDC	290 mA	600 mA	High-Side	1	150 °C	-40 °C	8-SOIC	3.9 mm	0.154 in

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.71
		10	$ 1.54
		25	$ 1.45
		100	$ 1.23
		250	$ 1.16
		500	$ 1.01
		1000	$ 0.84
	Digi-Reel®	1	$ 1.71
		10	$ 1.54
		25	$ 1.45
		100	$ 1.23
		250	$ 1.16
		500	$ 1.01
		1000	$ 0.84
	Tape & Reel (TR)	2500	$ 0.81
		5000	$ 0.77
		7500	$ 0.75
		12500	$ 0.72
Newark	Each (Supplied on Cut Tape)	1	$ 2.08
		10	$ 1.52
		25	$ 1.48
		50	$ 1.43
		100	$ 1.39
		250	$ 1.33
		500	$ 1.30
		1000	$ 1.27

Description

General part information

IRS2118 Series

600 V High Side Driver IC with typical 0.29 A source and 0.6 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP.

Documents

Technical documentation and resources

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