IRS2118 - GATE DRIVER
| Part | Channel Type | Supplier Device Package | Input Type | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Gate Type | Mounting Type | High Side Voltage - Max (Bootstrap) [Max] | Logic Voltage - VIL, VIH [Max] | Logic Voltage - VIL, VIH [Min] | Voltage - Supply [Max] | Voltage - Supply [Min] | Current - Peak Output (Source, Sink) [custom] | Current - Peak Output (Source, Sink) [custom] | Driven Configuration | Number of Drivers | Operating Temperature [Max] | Operating Temperature [Min] | Package / Case | Package / Case [y] | Package / Case [x] | Package / Case | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | Single | 8-SOIC | Inverting | 35 ns | 75 ns | IGBT N-Channel MOSFET | Surface Mount | 600 V | 9.5 V | 6 V | 20 V | 10 VDC | 290 mA | 600 mA | High-Side | 1 | 150 °C | -40 °C | 8-SOIC | 3.9 mm | 0.154 in | ||
Infineon Technologies | Single | 8-PDIP | Inverting | 35 ns | 75 ns | IGBT N-Channel MOSFET | Through Hole | 600 V | 9.5 V | 6 V | 20 V | 10 VDC | 290 mA | 600 mA | High-Side | 1 | 150 °C | -40 °C | 8-DIP | 0.3 in | 7.62 mm | ||
Infineon Technologies | Single | 8-SOIC | Inverting | 35 ns | 75 ns | IGBT N-Channel MOSFET | Surface Mount | 600 V | 9.5 V | 6 V | 20 V | 10 VDC | 290 mA | 600 mA | High-Side | 1 | 150 °C | -40 °C | 8-SOIC | 3.9 mm | 0.154 in |