SCT3120ALGC11
ActiveRohm Semiconductor
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 21 A, 650 V, 0.12 OHM, TO-247N
SCT3120ALGC11
ActiveRohm Semiconductor
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 21 A, 650 V, 0.12 OHM, TO-247N
Description
General part information
SCT3120 Series
SCT3120AL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
Technical Specifications
Parameters and characteristics for this part
| Specification | SCT3120ALGC11 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 21 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 38 nC |
| Input Capacitance (Ciss) (Max) | 460 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 175 °C |
| Package / Case | TO-247-3 |
| Package Name | TO-247N |
| Power Dissipation (Max) | 103 W |
| Rds On (Max) | 156 mOhm |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) Negative | -4 V |
| Vgs (Max) Positive | 22 V |
| Vgs(th) (Max) | 5.6 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
SiC Flammability
TO-247N Taping Spec
Explanation for Marking
Oscillation countermeasures for MOSFETs in parallel
How to Use PLECS Models
θ<sub>JC</sub> and Ψ<sub>JT</sub>
The Problem with Traditional Vaccine Storage Freezers and How ROHM Cutting-edge Power Solutions Can Take them to the Next Level
Basics of Thermal Resistance and Heat Dissipation
How to Use the Thermal Resistance and Thermal Characteristics Parameters
Two-Resistor Model for Thermal Simulation
Impedance Characteristics of Bypass Capacitor
Package Dimensions
Calculation of Power Dissipation in Switching Circuit
Anti-Whisker formation
Application Note for SiC Power Devices and Modules
Power Eco Family: Overview of ROHM's Power Semiconductor Lineup
5kW High-Efficiency Fan-less Inverter
What is a Thermal Model? (SiC Power Device)
About Export Administration Regulations (EAR)
Gate-Source Voltage Surge Suppression Methods
Compliance of the ELV directive
Thermal Resistance Measurement Method for SiC MOSFET
Precautions When Measuring the Rear of the Package with a Thermocouple
Judgment Criteria of Thermal Evaluation
Snubber circuit design methods for SiC MOSFET
How to Use LTspice® Models
4 Steps for Successful Thermal Designing of Power Devices
Simulation Verification to Identify Oscillation between Parallel Dies during Design Phase of Power Modules
Condition of Soldering
Gate-source voltage behaviour in a bridge configuration
θ<sub>JA</sub> and Ψ<sub>JT</sub>
Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials
What Is Thermal Design
ESD Data
How to Use PSIM Models
PCB Layout Thermal Design Guide
Calculating Power Loss from Measured Waveforms
Notes for Temperature Measurement Using Thermocouples
Best practices for the connection of Driver Source/Emitter terminals in discrete devices
Method for Calculating Junction Temperature from Transient Thermal Resistance Data
Design Method for Comparator-less Miller Clamp Circuits
How to measure the oscillation occurs between parallel-connected devices
SiC MOSFET Layout Design Considerations
Notes for Calculating Power Consumption:Static Operation
Types and Features of Transistors
Cutting-Edge Web Simulation Tool "ROHM Solution Simulator" Capable of Complete Circuit Verification of Power Devices and Driver ICs
Importance of Probe Calibration When Measuring Power: Deskew
Reliability Test Result
How to Create Symbols for PSpice Models
SCT3120AL Data Sheet
Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)
Basics and Design Guidelines for Gate Drive Circuits
How to Use Thermal Models
800V Three-Phase Output LLC DC/DC Resonant Converter
Solving the challenges of driving SiC MOSFETs with new packaging developments
LEADRIVE: Design, Test and System Evaluation of Silicon Carbide Power Modules and Motor Control Units
How to Suppress the Parallel Drive Oscillation in SiC Modules
How to Use LTspice® Models: Tips for Improving Convergence
Inner Structure
Generation Mechanism of Voltage Surge on Commutation Side (Basic)
Notes for Temperature Measurement Using Forward Voltage of PN Junction
Method for Monitoring Switching Waveform
Precautions for Thermal Resistance of Insulation Sheet
Measurement Method and Usage of Thermal Resistance RthJC
Notes on Gate Drive Voltage Setting and Linear Mode Application of SiC MOSFET
Precautions during gate-source voltage measurement for SiC MOSFET
Part Explanation
Application Note EN
