650V, 21A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET
650V, 21A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET
650V, 21A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET
| Part | Drain to Source Voltage (Vdss) | Vgs(th) (Max) | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) | Operating Temperature | Current - Continuous Drain (Id) (Tc) | Mounting Type | Gate Charge (Max) | Technology | Rds On (Max) | Vgs (Max) Positive | Vgs (Max) Negative | Package Leads | Package Name | FET Type | Package / Case | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 650 V | 5.6 V | 100 W | 460 pF | 175 °C | 21 A | Surface Mount | 38 nC | SiCFET (Silicon Carbide) | 156 mOhm | 22 V | -4 V | 7 Leads | D2PAK TO-263-7 | N-Channel | ||
 Rohm Semiconductor | 650 V | 5.6 V | 103 W | 460 pF | 175 °C | 21 A | Through Hole | 38 nC | SiCFET (Silicon Carbide) | 156 mOhm | 22 V | -4 V | TO-247N | N-Channel | TO-247-3 | 18 V |