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TK110A65Z,S4X

TK110A65Z,S4X

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Toshiba Semiconductor and Storage

HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 650 V, 0.11 Ω@10V, TO-220SIS, DTMOSⅥ

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TK110A65Z,S4X

TK110A65Z,S4X

Active
Toshiba Semiconductor and Storage

HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 650 V, 0.11 Ω@10V, TO-220SIS, DTMOSⅥ

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Description

General part information

TK110A65Z Series

High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 650 V, 0.11 Ω@10V, TO-220SIS, DTMOSⅥ

Technical Specifications

Parameters and characteristics for this part

SpecificationTK110A65Z,S4X
Current - Continuous Drain (Id) (Ta)24 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)40 nC
Input Capacitance (Ciss) (Max)2250 pF
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-220-3 Full Pack
Package NameTO-220SIS
Power Dissipation (Max)45 W
Rds On (Max)110 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max)4 V

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

TK110A65Z,S4X | Datasheet
Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes
Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes
Hints and Tips for Thermal Design for Discrete Semiconductor Devices
Selection Guide MOSFETs 2025 Rev1.0
Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes
Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2
Maximum Ratings: Power MOSFET Application Notes
Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices
Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter
RC Snubbers for Step-Down Converters
Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system
Electrical Characteristics: Power MOSFET Application Notes
Parasitic Oscillation and Ringing: Power MOSFET Application Notes
Derating of the MOSFET Safe Operating Area
Motor Control (Vacuum Cleaners)
Power Factor Correction (PFC) Circuits: Power MOSFET Application Notes
Resonant Circuits and Soft Switching
Calculating the Temperature of Discrete Semiconductor Devices
Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes
Hints and Tips for Thermal Design part3
MOSFET Secondary Breakdown
TK110A65Z Data sheet/Japanese
MOSFET Avalanche Ruggedness: Power MOSFET Application Notes
Simplified CFD Model Application Note
Avalanche energy calculation
Reverse Recovery Operation and Destruction of MOSFET Body Diode
Structures and Characteristics: Power MOSFET Application Notes
MOSFET SPICE model grade
MOSFET Gate Drive Circuit: Power MOSFET Application Notes
Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2
U-MOSⅨ-H 60V Low VDS spike TPH1R306P1
MOSFET Self-Turn-On Phenomenon