Beta
⌘K
MOSFET N-CH 650V 24A TO220SIS
| Part | Mounting Type | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Operating Temperature | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (Max) | Supplier Device Package | Package / Case | FET Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | Through Hole | 4 V | 45 W | 150 °C | 10 V | 110 mOhm | 30 V | TO-220SIS | TO-220-3 Full Pack | N-Channel | 40 nC | 2250 pF | MOSFET (Metal Oxide) | 650 V | 24 A |