IPS65R1K5CEAKMA1

Obsolete

Infineon Technologies

TRANS MOSFET N-CH 650V 5.2A 3-PIN(3+TAB) TO-251 TUBE

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Obsolete

Infineon Technologies

TRANS MOSFET N-CH 650V 5.2A 3-PIN(3+TAB) TO-251 TUBE

Technical Specifications

Parameters and characteristics for this part

Specification	IPS65R1K5CEAKMA1

Current - Continuous Drain (Id) @ 25°C	3.1 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	10.5 nC
Input Capacitance (Ciss) (Max) @ Vds	225 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-251-3 Stub Leads, IPAK
Power Dissipation (Max) [Max]	28 W
Rds On (Max) @ Id, Vgs	1.5 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Technology	FET Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Mounting Type	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Vgs (Max)
Infineon Technologies IPS65R950C6AKMA1	MOSFET (Metal Oxide)	N-Channel	4.5 A	-55 °C	150 °C	650 V	15.3 nC	10 V	3.5 V	TO-251-3 Stub Leads IPAK	328 pF	PG-TO251-3-11	Through Hole	950 mOhm	37 W	20 V
Infineon Technologies IPS65R1K5CEAKMA1	MOSFET (Metal Oxide)	N-Channel	3.1 A	-40 °C	150 °C	650 V	10.5 nC	10 V	3.5 V	TO-251-3 Stub Leads IPAK	225 pF		Through Hole	1.5 Ohm	28 W	20 V
Infineon Technologies IPS65R1K0CEAKMA1	MOSFET (Metal Oxide)	N-Channel	4.3 A	-40 °C	150 °C	650 V	15.3 nC	10 V	3.5 V	TO-251-3 Stub Leads IPAK	328 pF		Through Hole	1 Ohm	37 W	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 650 V 3.1A (Tc) 28W (Tc) Through Hole TO-251

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