IPS65R Series

Catalog

MOSFET N-CH 650V 4.5A TO251-3

Part	Technology	FET Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Mounting Type	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Vgs (Max)
Infineon Technologies IPS65R950C6AKMA1	MOSFET (Metal Oxide)	N-Channel	4.5 A	-55 °C	150 °C	650 V	15.3 nC	10 V	3.5 V	TO-251-3 Stub Leads IPAK	328 pF	PG-TO251-3-11	Through Hole	950 mOhm	37 W	20 V
Infineon Technologies IPS65R1K5CEAKMA1	MOSFET (Metal Oxide)	N-Channel	3.1 A	-40 °C	150 °C	650 V	10.5 nC	10 V	3.5 V	TO-251-3 Stub Leads IPAK	225 pF		Through Hole	1.5 Ohm	28 W	20 V
Infineon Technologies IPS65R1K0CEAKMA1	MOSFET (Metal Oxide)	N-Channel	4.3 A	-40 °C	150 °C	650 V	15.3 nC	10 V	3.5 V	TO-251-3 Stub Leads IPAK	328 pF		Through Hole	1 Ohm	37 W	20 V