IPL65R1K0C6SATMA1

Obsolete

Infineon Technologies

COOLMOS™ C6 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; THINPAK 5X6 PACKAGE; 1000 MOHM;

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IPL65R1K0C6SATMA1

Obsolete

Infineon Technologies

COOLMOS™ C6 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; THINPAK 5X6 PACKAGE; 1000 MOHM;

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPL65R1K0C6SATMA1

Current - Continuous Drain (Id) @ 25°C	4.2 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	328 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max) [Max]	34.7 W
Rds On (Max) @ Id, Vgs	1 Ohm
Supplier Device Package	PG-TSON-8-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

IPL65R1 Series

Part	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Mounting Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Technology	Vgs (Max)	Power Dissipation (Max) [Max]	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]
Infineon Technologies IPL65R1K0C6SATMA1	8-PowerTDFN	150 °C	-40 °C	4.2 A	1 Ohm	3.5 V	650 V	Surface Mount	PG-TSON-8-2	328 pF	MOSFET (Metal Oxide)	20 V	34.7 W	N-Channel	10 V
Infineon Technologies IPL65R1K5C6SATMA1	8-PowerTDFN	150 °C	-40 °C	3 A	1.5 Ohm	3.5 V	650 V	Surface Mount	PG-TSON-8-2	225 pF	MOSFET (Metal Oxide)	20 V	26.6 W	N-Channel	10 V	11 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

IPL65R1 Series

The new CoolMOS™ ThinPAK 5x6 is a leadless SMD package especially designed for high voltage MOSFETs. This new package has a very small footprint of 5x6mm2and a very low profile with only 1mm height. This significantly smaller package size in combination with its benchmark low parasitics inductances can be used as a new and effective way to decrease system solution size in power- density driven designs. The ThinPAK 5x6 package is characterized by a very low source inductance 1.6nH, as well as a similar thermal performance as DPAK. The package hence enables faster and thus more efficient switching of power MOSFETs and is easier to handle in terms of switching behavior and EMI.

Documents

Technical documentation and resources