IPI06N03LA

Obsolete

Infineon Technologies

MOSFET N-CH 25V 50A TO262-3

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Obsolete

Infineon Technologies

MOSFET N-CH 25V 50A TO262-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPI06N03LA

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	22 nC
Input Capacitance (Ciss) (Max) @ Vds	2653 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	83 W
Rds On (Max) @ Id, Vgs [Max]	6.2 mOhm
Supplier Device Package	PG-TO262-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Package / Case	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Current - Continuous Drain (Id) @ 25°C	Technology	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Mounting Type
Infineon Technologies IPI06N03LA	25 V	6.2 mOhm	2653 pF	-55 °C	175 ░C	2 V	I2PAK TO-262-3 Long Leads TO-262AA	83 W	4.5 V 10 V	N-Channel	50 A	MOSFET (Metal Oxide)	PG-TO262-3	22 nC	20 V	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 25 V 50A (Tc) 83W (Tc) Through Hole PG-TO262-3

Technical documentation and resources