MOSFET N-CH 25V 50A TO262-3
| Part | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Package / Case | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Current - Continuous Drain (Id) @ 25°C | Technology | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs (Max) | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 25 V | 6.2 mOhm | 2653 pF | -55 °C | 175 ░C | 2 V | I2PAK TO-262-3 Long Leads TO-262AA | 83 W | 4.5 V 10 V | N-Channel | 50 A | MOSFET (Metal Oxide) | PG-TO262-3 | 22 nC | 20 V | Through Hole |