Zenode.ai Logo
Beta
⌘K
Log InSign Up
STP5NK80Z - TO-220-3

STP5NK80Z

Active
STMicroelectronics

N-CHANNEL 800 V, 1.9 OHM TYP., 4.3 A SUPERMESH POWER MOSFET IN A TO-220 PACKAGE

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet+13
STP5NK80Z - TO-220-3

STP5NK80Z

Active
STMicroelectronics

N-CHANNEL 800 V, 1.9 OHM TYP., 4.3 A SUPERMESH POWER MOSFET IN A TO-220 PACKAGE

Deep-Dive with AI

DocumentsDatasheet+13

Technical Specifications

Parameters and characteristics for this part

SpecificationSTP5NK80Z
Current - Continuous Drain (Id) @ 25°C4.3 A
Drain to Source Voltage (Vdss)800 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs45.5 nC
Input Capacitance (Ciss) (Max) @ Vds910 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max) [Max]110 W
Rds On (Max) @ Id, Vgs2.4 Ohm
Supplier Device PackageTO-220
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 2.52
50$ 1.61
100$ 1.43
500$ 1.16
1000$ 1.02
2000$ 0.96
5000$ 0.93

Description

General part information

STP5NK80Z Series

This device is an N-channel Zener-protected Power MOSFET developed using STMicroelectronics’ SuperMESH™ technology, achieved through optimization of ST’s well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.