STP5NK80Z Series

N-channel 800 V, 1.9 Ohm typ., 4.3 A SuperMESH Power MOSFET in a TO-220 package

Catalog

N-channel 800 V, 1.9 Ohm typ., 4.3 A SuperMESH Power MOSFET in a TO-220 package

Part	Package / Case	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Vgs (Max)	Technology	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package
STMicroelectronics STP5NK80Z	TO-220-3	Through Hole	910 pF	4.5 V	-55 °C	150 °C	800 V	45.5 nC	10 V	N-Channel	110 W	2.4 Ohm	30 V	MOSFET (Metal Oxide)	4.3 A	TO-220

Catalog

N-channel 800 V, 1.9 Ohm typ., 4.3 A SuperMESH Power MOSFET in a TO-220 package

Description

This device is an N-channel Zener-protected Power MOSFET developed using STMicroelectronics’ SuperMESH™ technology, achieved through optimization of ST’s well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.