SCTWA35N65G2VAG

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STMicroelectronics

SICFET N-CH 650V 45A TO247

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SCTWA35N65G2VAG

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STMicroelectronics

SICFET N-CH 650V 45A TO247

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	SCTWA35N65G2VAG

Current - Continuous Drain (Id) @ 25°C	45 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	20 V, 18 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	73 nC
Input Capacitance (Ciss) (Max) @ Vds	1370 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	208 W
Rds On (Max) @ Id, Vgs	72 mOhm
Supplier Device Package	TO-247 Long Leads
Vgs (Max) [Max]	20 V
Vgs (Max) [Min]	-5 V
Vgs(th) (Max) @ Id	3.2 V

SCTWA35N65G2V Series

Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an HiP247 long leads package

Part	Vgs(th) (Max) @ Id	Vgs (Max) [Max]	Vgs (Max) [Min]	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds
STMicroelectronics SCTWA35N65G2V	3.2 V	20 V	-5 V	650 V	208 W	72 mOhm	-55 °C	175 ░C	73 nC	N-Channel	Through Hole	45 A	73000 pF	TO-247-3	18 V 20 V	TO-247 Long Leads
STMicroelectronics SCTWA35N65G2VAG	3.2 V	20 V	-5 V	650 V	208 W	72 mOhm	-55 °C	175 ░C	73 nC	N-Channel	Through Hole	45 A		TO-247-3	18 V 20 V	TO-247 Long Leads	1370 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

SCTWA35N65G2V Series

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

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