SCTWA35N65G2V Series

Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an HiP247 long leads package

Catalog

Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an HiP247 long leads package

Part	Vgs(th) (Max) @ Id	Vgs (Max) [Max]	Vgs (Max) [Min]	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds
STMicroelectronics SCTWA35N65G2V	3.2 V	20 V	-5 V	650 V	208 W	72 mOhm	-55 °C	175 ░C	73 nC	N-Channel	Through Hole	45 A	73000 pF	TO-247-3	18 V 20 V	TO-247 Long Leads
STMicroelectronics SCTWA35N65G2VAG	3.2 V	20 V	-5 V	650 V	208 W	72 mOhm	-55 °C	175 ░C	73 nC	N-Channel	Through Hole	45 A		TO-247-3	18 V 20 V	TO-247 Long Leads	1370 pF

Catalog

Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an HiP247 long leads package

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.