IMZA65R040M2HXKSA1

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Infineon Technologies

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 46 A, 650 V, 0.036 OHM, TO-247

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IMZA65R040M2HXKSA1

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Infineon Technologies

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 46 A, 650 V, 0.036 OHM, TO-247

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IMZA65R040M2HXKSA1

Current - Continuous Drain (Id) @ 25°C	46 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	15 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	20 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	28 nC
Input Capacitance (Ciss) (Max) @ Vds	997 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-4
Power Dissipation (Max)	172 W
Rds On (Max) @ Id, Vgs	36 mOhm
Supplier Device Package	PG-TO247-4-8
Technology	SiC (Silicon Carbide Junction Transistor)
Vgs (Max)	-7 V, 23 V
Vgs(th) (Max) @ Id	5.6 V

IMZA65R040 Series

Part	Rds On (Max) @ Id, Vgs	Technology	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Vgs (Max)	Package / Case	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Mounting Type
Infineon Technologies IMZA65R040M2HXKSA1	36 mOhm	SiC (Silicon Carbide Junction Transistor)	N-Channel	650 V	46 A	5.6 V	-7 V 23 V	TO-247-4	PG-TO247-4-8	997 pF	15 V	20 V	-55 °C	175 ░C	172 W	28 nC	Through Hole

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 10.96
		10	$ 9.90
		30	$ 9.44
		120	$ 8.20
		270	$ 7.83
		510	$ 7.14
		1020	$ 6.22
Newark	Each	1	$ 8.83
		10	$ 6.85
		25	$ 6.28
		50	$ 6.02
		100	$ 5.76
		480	$ 5.53
		720	$ 5.26

Description

General part information

IMZA65R040 Series

The CoolSiC™ MOSFET 650 V, 40 mΩ G2 in a TO-247-4 package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.

Documents

Technical documentation and resources