Beta
⌘K
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 46 A, 650 V, 0.036 OHM, TO-247
| Part | Rds On (Max) @ Id, Vgs | Technology | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Vgs (Max) | Package / Case | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 36 mOhm | SiC (Silicon Carbide Junction Transistor) | N-Channel | 650 V | 46 A | 5.6 V | -7 V 23 V | TO-247-4 | PG-TO247-4-8 | 997 pF | 15 V | 20 V | -55 °C | 175 ░C | 172 W | 28 nC | Through Hole |