DMN3190LDW-13
ActiveDiodes Inc
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
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DMN3190LDW-13
ActiveDiodes Inc
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMN3190LDW-13 |
|---|---|
| Configuration | 2 N-Channel (Dual) |
| Current - Continuous Drain (Id) @ 25°C | 1 A |
| Drain to Source Voltage (Vdss) | 30 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 2 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 87 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Power - Max [Max] | 320 mW |
| Rds On (Max) @ Id, Vgs [Max] | 190 mOhm |
| Supplier Device Package | SOT-363 |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.44 | |
| 10 | $ 0.31 | |||
| 100 | $ 0.16 | |||
| 500 | $ 0.13 | |||
| 1000 | $ 0.09 | |||
| 2000 | $ 0.08 | |||
| 5000 | $ 0.08 | |||
| Digi-Reel® | 1 | $ 0.44 | ||
| 10 | $ 0.31 | |||
| 100 | $ 0.16 | |||
| 500 | $ 0.13 | |||
| 1000 | $ 0.09 | |||
| 2000 | $ 0.08 | |||
| 5000 | $ 0.08 | |||
| Tape & Reel (TR) | 10000 | $ 0.07 | ||
| 30000 | $ 0.06 | |||
| 50000 | $ 0.05 | |||
Description
General part information
DMN3190LDW Series
This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Documents
Technical documentation and resources