Dual N-Channel Enhancement Mode MOSFET
Dual N-Channel Enhancement Mode MOSFET
| Part | FET Feature | Technology | Package / Case | Supplier Device Package | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Configuration | Rds On (Max) @ Id, Vgs [Max] | Power - Max [Max] | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | Logic Level Gate | MOSFET (Metal Oxide) | 6-TSSOP SC-88 SOT-363 | SOT-363 | 2.8 V | 30 V | 1 A | Surface Mount | 2 N-Channel (Dual) | 190 mOhm | 320 mW | 2 nC | -55 °C | 150 °C | 87 pF |