AOT5B60D

Alpha & Omega Semiconductor Inc.

IGBT 600V 10A 82.4W TO220

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Alpha & Omega Semiconductor Inc.

IGBT 600V 10A 82.4W TO220

Technical Specifications

Parameters and characteristics for this part

Specification	AOT5B60D

Current - Collector (Ic) (Max)	23 A
Current - Collector Pulsed (Icm)	20 A
Gate Charge	9.4 nC
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power - Max [Max]	82.4 W
Reverse Recovery Time (trr)	98 ns
Supplier Device Package	TO-220
Switching Energy	140 µJ, 40 µJ
Td (on/off) @ 25°C	12 ns, 83 ns
Test Condition	400 V, 5 A, 15 V, 60 Ohm
Vce(on) (Max) @ Vge, Ic	1.8 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Supplier Device Package	Drain to Source Voltage (Vdss)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [x]	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Vgs(th) (Max) @ Id	Technology	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Current - Collector Pulsed (Icm)	Power - Max [Max]	Td (on/off) @ 25°C	Gate Charge	Vce(on) (Max) @ Vge, Ic	Switching Energy	Current - Collector (Ic) (Max)	Reverse Recovery Time (trr)	Voltage - Collector Emitter Breakdown (Max) [Max]	Test Condition
Alpha & Omega Semiconductor Inc. AOT5N60	TO-220	600 V	N-Channel	-55 °C	150 °C	10 V	132 W	20 nC	Through Hole	5 A	30 V	4.5 V	MOSFET (Metal Oxide)	1.8 Ohm	700 pF	TO-220-3
Alpha & Omega Semiconductor Inc. AOT5B60D	TO-220			-55 °C	175 ░C				Through Hole							TO-220-3	20 A	82.4 W	12 ns 83 ns	9.4 nC	1.8 V	40 µJ 140 µJ	23 A	98 ns	600 V	5 A 15 V 60 Ohm 400 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1000	$ 0.75