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MOSFET N-CH 600V 5A TO220
| Part | Supplier Device Package | Drain to Source Voltage (Vdss) | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [x] | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Vgs(th) (Max) @ Id | Technology | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Current - Collector Pulsed (Icm) | Power - Max [Max] | Td (on/off) @ 25°C | Gate Charge | Vce(on) (Max) @ Vge, Ic | Switching Energy | Current - Collector (Ic) (Max) | Reverse Recovery Time (trr) | Voltage - Collector Emitter Breakdown (Max) [Max] | Test Condition |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Alpha & Omega Semiconductor Inc. | TO-220 | 600 V | N-Channel | -55 °C | 150 °C | 10 V | 132 W | 20 nC | Through Hole | 5 A | 30 V | 4.5 V | MOSFET (Metal Oxide) | 1.8 Ohm | 700 pF | TO-220-3 | ||||||||||
Alpha & Omega Semiconductor Inc. | TO-220 | -55 °C | 175 ░C | Through Hole | TO-220-3 | 20 A | 82.4 W | 12 ns 83 ns | 9.4 nC | 1.8 V | 40 µJ 140 µJ | 23 A | 98 ns | 600 V | 5 A 15 V 60 Ohm 400 V |