SCS304AGC16
ActiveRohm Semiconductor
SILICON CARBIDE SCHOTTKY DIODE, SINGLE DUAL CATHODE, 650 V, 4 A, 11 NC, TO-220ACGE
SCS304AGC16
ActiveRohm Semiconductor
SILICON CARBIDE SCHOTTKY DIODE, SINGLE DUAL CATHODE, 650 V, 4 A, 11 NC, TO-220ACGE
Description
General part information
SCS304AG Series
Switching loss reduced, enabling high-speed switching.
Technical Specifications
Parameters and characteristics for this part
| Specification | SCS304AGC16 |
|---|---|
| Capacitance | 200 pF |
| Current - Average Rectified (Io) | 4 A |
| Current - Reverse Leakage | 20 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction | 175 °C |
| Package / Case | TO-220-2 |
| Package Name | TO-220ACFP |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Speed - Fast Recovery (Minimum) | 500 mA |
| Speed - Recovery Current | 500 mA, 500 mA |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) | 1.5 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Datasheet
How to Suppress the Parallel Drive Oscillation in SiC Modules
Two-Resistor Model for Thermal Simulation
θ<sub>JC</sub> and Ψ<sub>JT</sub>
Notes for Calculating Power Consumption:Static Operation
About Flammability of Materials
Impedance Characteristics of Bypass Capacitor
Diode Types and Applications
Precautions for Thermal Resistance of Insulation Sheet
Judgment Criteria of Thermal Evaluation
Package Dimension - SiC TO-220ACGE
About Export Administration Regulations (EAR)
Method for Monitoring Switching Waveform
How to Use Thermal Models
How to Use LTspice® Models: Tips for Improving Convergence
Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)
Part Explanation
Oscillation countermeasures for MOSFETs in parallel
Explanation for Marking
Condition of Soldering / Land Pattern Reference
4 Steps for Successful Thermal Designing of Power Devices
Cutting-Edge Web Simulation Tool "ROHM Solution Simulator" Capable of Complete Circuit Verification of Power Devices and Driver ICs
Notes for Temperature Measurement Using Thermocouples
Precautions When Measuring the Rear of the Package with a Thermocouple
Anti-Whisker formation
Calculation of Power Dissipation in Switching Circuit
What Is Thermal Design
Method for Calculating Junction Temperature from Transient Thermal Resistance Data
Importance of Probe Calibration When Measuring Power: Deskew
θ<sub>JA</sub> and Ψ<sub>JT</sub>
Simulation Verification to Identify Oscillation between Parallel Dies during Design Phase of Power Modules
How to Use LTspice® Models
PCB Layout Thermal Design Guide
How to measure the oscillation occurs between parallel-connected devices
Compliance of the ELV directive
Notes for Temperature Measurement Using Forward Voltage of PN Junction
What is a Thermal Model? (SiC Power Device)
Basics of Thermal Resistance and Heat Dissipation
Power Eco Family: Overview of ROHM's Power Semiconductor Lineup
How to Use the Thermal Resistance and Thermal Characteristics Parameters
Measurement Method and Usage of Thermal Resistance RthJC
Application Note for SiC Power Devices and Modules