Catalog
650V, 4A, THD, Silicon-carbide (SiC) SBD
Description
AI
Switching loss reduced, enabling high-speed switching.
Beta
⌘K
650V, 4A, THD, Silicon-carbide (SiC) SBD
650V, 4A, THD, Silicon-carbide (SiC) SBD
| Part | Mounting Type | Package / Case | Voltage - DC Reverse (Vr) (Max) | Technology | Voltage - Forward (Vf) (Max) | Reverse Recovery Time (trr) | Capacitance | Operating Temperature - Junction | Current - Average Rectified (Io) | Package Name | Current - Reverse Leakage | Speed - Fast Recovery (Minimum) | Speed | Speed - Recovery Current |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | Through Hole | TO-220-2 | 650 V | SiC (Silicon Carbide) Schottky | 1.5 V | 0 ns | 200 pF | 175 °C | 4 A | TO-220ACFP | 20 µA | 500 mA | No Recovery Time | 500 mA 500 mA |