SSM6N35AFE,LF

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Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.25A ES6

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Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.25A ES6

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6N35AFE,LF

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	250 mA
Drain to Source Voltage (Vdss)	20 V
FET Feature	1.2 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	0.34 nC
Input Capacitance (Ciss) (Max) @ Vds	36 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-666, SOT-563
Power - Max [Max]	250 mW
Rds On (Max) @ Id, Vgs	1.1 Ohm
Supplier Device Package	ES6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Supplier Device Package	FET Feature	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Configuration	Technology	Operating Temperature	Package / Case	Mounting Type	FET Feature	Gate Charge (Qg) (Max) @ Vgs [Max]	Power - Max [Max]
Toshiba Semiconductor and Storage SSM6N35FE,LM	ES6	Logic Level Gate	180 mA	9.5 pF	3 Ohm	20 V	1 V	2 N-Channel (Dual)	MOSFET (Metal Oxide)	150 °C	SOT-563 SOT-666	Surface Mount
Toshiba Semiconductor and Storage SSM6N35AFE,LF	ES6	Logic Level Gate	250 mA	36 pF	1.1 Ohm	20 V	1 V	2 N-Channel (Dual)	MOSFET (Metal Oxide)	150 °C	SOT-563 SOT-666	Surface Mount	1.2 V	0.34 nC	250 mW

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General part information

Mosfet Array 20V 250mA (Ta) 250mW Surface Mount ES6

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