SSM6N35 Series

Catalog

MOSFET 2N-CH 20V 0.18A ES6

Part	Supplier Device Package	FET Feature	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Configuration	Technology	Operating Temperature	Package / Case	Mounting Type	FET Feature	Gate Charge (Qg) (Max) @ Vgs [Max]	Power - Max [Max]
Toshiba Semiconductor and Storage SSM6N35FE,LM	ES6	Logic Level Gate	180 mA	9.5 pF	3 Ohm	20 V	1 V	2 N-Channel (Dual)	MOSFET (Metal Oxide)	150 °C	SOT-563 SOT-666	Surface Mount
Toshiba Semiconductor and Storage SSM6N35AFE,LF	ES6	Logic Level Gate	250 mA	36 pF	1.1 Ohm	20 V	1 V	2 N-Channel (Dual)	MOSFET (Metal Oxide)	150 °C	SOT-563 SOT-666	Surface Mount	1.2 V	0.34 nC	250 mW