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BSC057N03LSGATMA1 - PG-TDSON-8-5

BSC057N03LSGATMA1

Infineon Technologies

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 30 V ; SUPERSO8 5X6 PACKAGE; 5.7 MOHM;

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BSC057N03LSGATMA1 - PG-TDSON-8-5

BSC057N03LSGATMA1

Infineon Technologies

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 30 V ; SUPERSO8 5X6 PACKAGE; 5.7 MOHM;

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationBSC057N03LSGATMA1
Current - Continuous Drain (Id) @ 25°C71 A, 17 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs30 nC
Input Capacitance (Ciss) (Max) @ Vds2400 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)2.5 W, 45 W
Rds On (Max) @ Id, Vgs5.7 mOhm
Supplier Device PackagePG-TDSON-8-5
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id [Max]2.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.33
10$ 0.83
Digi-Reel® 1$ 1.33
10$ 0.83
Tape & Reel (TR) 5000$ 0.32
10000$ 0.31

Description

General part information

BSC057 Series

Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in halfbridge configuration (power stage 5x6)

Documents

Technical documentation and resources