BSC057 Series

Catalog

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 30 V ; SUPERSO8 5X6 PACKAGE; 5.7 MOHM;

Part	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id [Max]	Input Capacitance (Ciss) (Max) @ Vds	Technology	Current - Continuous Drain (Id) @ 25°C	FET Type	Power Dissipation (Max)	Mounting Type	Vgs (Max)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id
Infineon Technologies BSC057N03LSGATMA1	5.7 mOhm	2.2 V	2400 pF	MOSFET (Metal Oxide)	17 A 71 A	N-Channel	2.5 W 45 W	Surface Mount	20 V	PG-TDSON-8-5	30 nC	8-PowerTDFN	-55 °C	150 °C	30 V	4.5 V 10 V
Infineon Technologies BSC057N03MSGATMA1	5.7 mOhm		3100 pF	MOSFET (Metal Oxide)	15 A 71 A	N-Channel	2.5 W 45 W	Surface Mount	16 V	PG-TDSON-8-5		8-PowerTDFN	-55 °C	150 °C	30 V	4.5 V 10 V	40 nC	2 V