IPBE65R050CFD7AATMA1

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Infineon Technologies

650 V COOLMOS™ CFD7A AUTOMOTIVE POWER MOSFET D2PAK 7PIN (TO-263 7PIN)

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DocumentsTechnical Data Sheet EN Datasheet +3

IPBE65R050CFD7AATMA1

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Infineon Technologies

650 V COOLMOS™ CFD7A AUTOMOTIVE POWER MOSFET D2PAK 7PIN (TO-263 7PIN)

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DocumentsTechnical Data Sheet EN Datasheet +3

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Technical Specifications

Parameters and characteristics for this part

Specification	IPBE65R050CFD7AATMA1

Current - Continuous Drain (Id) @ 25°C	45 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	102 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	4975 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-263CB, TO-263-7, D2PAK
Power Dissipation (Max) [Max]	227 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	50 mOhm
Supplier Device Package	PG-TO263-7-3-10
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

IPBE65 Series

Part	Technology	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Mounting Type	Vgs (Max)	Qualification	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Grade	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
Infineon Technologies IPBE65R190CFD7AATMA1	MOSFET (Metal Oxide)	4.5 V	7 nC	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	Surface Mount	20 V	AEC-Q101	14 A	1291 pF	PG-TO263-7-11	Automotive	N-Channel	150 °C	-40 °C	190 mOhm	650 V	77 W
Infineon Technologies IPBE65R099CFD7AATMA1	MOSFET (Metal Oxide)	4.5 V	53 nC	D2PAK TO-263-7 TO-263CB	Surface Mount	20 V	AEC-Q101	24 A	2513 pF	PG-TO263-7-3-10	Automotive	N-Channel	150 °C	-40 °C		650 V	127 W	99 mOhm	10 V
Infineon Technologies IPBE65R050CFD7AATMA1	MOSFET (Metal Oxide)			D2PAK TO-263-7 TO-263CB	Surface Mount	20 V	AEC-Q101	45 A	4975 pF	PG-TO263-7-3-10	Automotive	N-Channel	150 °C	-40 °C	50 mOhm	650 V			10 V	227 W	102 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 9.19
		10	$ 6.30
		100	$ 4.67
		500	$ 4.25
	Digi-Reel®	1	$ 9.19
		10	$ 6.30
		100	$ 4.67
		500	$ 4.25
	Tape & Reel (TR)	1000	$ 4.25
Newark	Each (Supplied on Cut Tape)	1	$ 10.57
		10	$ 8.65
		25	$ 8.16
		50	$ 7.56
		100	$ 6.96
		250	$ 6.75
		500	$ 6.55
		1000	$ 6.54

Description

General part information

IPBE65 Series

The 50mOhm IPBE65R050CFD7A in D2PAK 7-pin package is part of the automotive-qualified 650V CoolMOS™ SJ powerMOSFET CFD7Aproduct family. As compared to the previous generation, CoolMOS™ CFD7A offers higher reliability and power density while increasing design flexibility. When using Infineon’s650 V CoolMOS™ CFD7A technologyin combination with the D2PAK 7-pin package, customers benefit from enhanced efficiency and thermal behavior. The Kelvin-source concept used in the D2PAK 7-pin (driver-source pin) overcomes the limitations caused by the source inductance and improves the switching performance. Resulting advantages at system level, especially at high currents, are the reduction of switching losses and heat. Furthermore, the increased creepage distance of 4.2mm between drain and source/gate facilitates device usage for higher battery voltage classes up to 475V.

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Technical documentation and resources

IPBE65R050CFD7AATMA1

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IPBE65R050CFD7AATMA1

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Technical Specifications

IPBE65 Series

Pricing

Description

IPBE65 Series

Documents

Technical Data Sheet EN

Datasheet

IPBE65R050CFD7A

MOSFET CoolMOS™ CFD7A 650V

IPBE65R050CFD7A

IPBE65 Series