Specification	CSD17510Q5A

Current - Continuous Drain (Id) (Ta)	20 A
Current - Continuous Drain (Id) (Tc)	100 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	8.3 nC
Input Capacitance (Ciss) (Max)	1250 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-PowerTDFN
Package Length	5 mm
Package Name	8-VSONP
Package Width	6 mm
Power Dissipation (Max)	3 W
Rds On (Max)	5.2 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.1 V

CSD17510 Series

Part	Rds On (Max)	Technology	FET Type	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	Package / Case	Operating Temperature (Min)	Operating Temperature (Max)	Package Width	Package Name	Package Length	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Mounting Type	Drain to Source Voltage (Vdss)	Vgs (Max)	Current - Continuous Drain (Id) (Ta)	Current - Continuous Drain (Id) (Tc)	Vgs(th) (Max)	Gate Charge (Max)
Texas Instruments CSD17510Q5A	5.2 mOhm	MOSFET (Metal Oxide)	N-Channel	1250 pF	3 W	8-PowerTDFN	-55 °C	150 °C	6 mm	8-VSONP	5 mm	10 V	4.5 V	Surface Mount	30 V	20 V	20 A	100 A	2.1 V	8.3 nC

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